transistor(npn) features complimentary to ss8550 marking: y1 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 1.5 a p c collector power dissipation 0.3 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c = 0.1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =40v, i e =0 0.1 a collector cut-off current i ceo v cb =20v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce =1v, i c = 100ma 120 400 dc current gain h fe(2) v ce =1v, i c = 800ma 40 collector-emitter saturation voltage v ce(sat) i c =800ma, i b = 80ma 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b = 80ma 1.2 v transition frequency f t v ce =10v, i c = 50ma f=30mhz 100 mhz classification of h fe (1) rank l h j range 120-200 200-350 300-400 so t -23 1. base 2. emitter 3. collector ss8 050 1 date:2011/05 www.htsemi.com semiconductor jinyu
0 0.4 0.8 1.2 1.6 2.0 0.1 0.2 0.3 0.4 0.5 i b = 3.0ma i b = 2.5ma i b = 2.0ma i b = 1.5ma i b = 1.0ma i b = 0.5ma i c [a], collector current v ce [v], collector-emitter voltage 0.1 1 10 100 1000 1 10 100 1000 v ce = 1v h fe , dc current gain i c [ma], collector current 0.1 1 10 100 1000 10 100 1000 10000 i c = 10 i b v ce (sat) v be (sat) v be (sat), v ce (sat)[mv], saturation voltage i c [ma], collector current 0.00.20.40.60.81.01.2 0.1 1 10 100 v ce = 1v i c [ma], collector current v be [v], base-emitter voltage 11 01 0 0 1 10 100 1000 i e = 0 f = 1mhz c ob [pf], capacitance v cb [v], collector-base voltage 1 10 100 400 1 10 100 1000 v ce = 10v f t [mhz], current gain bandwidth product i c [ma], collector current ss8 050 2 date:2011/05 www.htsemi.com semiconductor jinyu
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